Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000, C257S351000, C257S390000, C257S391000, C257S392000, C257S393000, C438S217000, C438S276000, C438S289000
Reexamination Certificate
active
06888202
ABSTRACT:
An integrated circuit is provided comprising a latch circuit including, a first inverter including a first high threshold voltage PMOS transistor and a first high threshold voltage NMOS transistor with a first data node comprising interconnected source/drains (S/D) of the first PMOS and NMOS transistors; a second inverter including a second high threshold voltage PMOS transistor and a second high threshold voltage NMOS transistor with a second data node comprising interconnected source/drains (S/D) of the second PMOS and NMOS transistors; wherein the gates of the first PMOS and first NMOS transistors are coupled to the second data node; wherein the gates of the second PMOS and second NMOS transistors are coupled to the first data node; a first low threshold voltage access transistor including a first S/D coupled to the first data node and to the gate of the second PMOS transistor and to the gate of the second NMOS transistor and including a second S/D coupled to a first data access node and including a gate coupled to a first access control node; and a second low threshold voltage access transistor including a first S/D coupled to the second data node and to the gate of the first PMOS transistor and to the gate of the first NMOS transistor and including a second S/D coupled to a second data access node and including a gate coupled to a second access control node.
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Kang Sung-Mo
Yoo Seung-Moon
Morrison & Foerster / LLP
Ortiz Edgardo
The Regents of the University of California
Wilson Allan R.
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