Low power, high performance junction transistor

Details Low power, high performance junction transistor Low power, high performance junction transistor

1994-08-18

1998-06-30

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257408, H01L 2976, H01L 29788, H01L 2994

Patent

active

057738637

ABSTRACT:
An improved junction transistor requiring low power and having high performance is described. The transistor includes a substrate, a well region of a first conductivity type, and source and drain regions of a second conductivity type separated by a channel region. The transistor further includes a gate region positioned on the surface of the substrate over the channel region, and a buried region of the first conductivity type is positioned within the well region and below the surface of the substrate. The buried region has a dopant concentration of the first conductivity type sufficiently high to slow the growth of source-drain depletion regions and diminish the likelihood of punch through. The buried region may take the form of a buried electrode region or a retrograde well in alternate embodiments. The device is characterized by a gate threshold voltage of at most about 150 mV which can be electrically adjusted using back biasing or floating gate techniques.

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