Low power electrically alterable nonvolatile memory cells...

Details Low power electrically alterable nonvolatile memory cells... Low power electrically alterable nonvolatile memory cells...

2005-09-23

2008-08-12

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S324000, C257SE21170, C257SE21680, C365S185180

Reexamination Certificate

active

07411244

ABSTRACT:
Nonvolatile memory cells having a conductor-filter system, a conductor-insulator system, and a charge-injection system are provided. The conductor-filter system provides band-pass filtering function, charge-filtering function, and mass-filtering function to charge-carriers flows. The conductor-insulator system provides Image-Force barrier lowering effect to collect charge-carriers. The charge-injection system includes the conductor-filter system and the conductor-insulator system, wherein the filter of the conductor-filter system contacts the conductor of the conductor-insulator system. Apparatus on cell architecture are provided for the nonvolatile memory cells. Additionally, apparatus on array architectures are provided for constructing the nonvolatile memory cells in memory array. Method on manufacturing such memory cells and array architectures are provided.

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