Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1992-03-30
1994-05-31
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
36518907, 365226, G11C 514
Patent
active
053175387
ABSTRACT:
In a DRAM, a logic "1" is redefined as the minimum VCC value minus one threshold voltage. The word line is not bootstrapped. This intermediate voltage is applied via the sense amplifier to the bit lines during refresh. The intermediate value is controlled preferably by a comparator controlling a driver. Even when the power supply voltage rises, the intermediate voltage is held constant by comparison to a fixed reference voltage. Operating current is substantially reduced because less power is required to write data into the memory cells, since a controlled lower voltage is used.
REFERENCES:
patent: 4506351 (1985-03-01), Scheuerlein et al.
Manzo Edward D.
Popek Joseph A.
United Memories Inc.
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