Low power DRAM

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

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Details

36518907, 365226, G11C 514

Patent

active

053175387

ABSTRACT:
In a DRAM, a logic "1" is redefined as the minimum VCC value minus one threshold voltage. The word line is not bootstrapped. This intermediate voltage is applied via the sense amplifier to the bit lines during refresh. The intermediate value is controlled preferably by a comparator controlling a driver. Even when the power supply voltage rises, the intermediate voltage is held constant by comparison to a fixed reference voltage. Operating current is substantially reduced because less power is required to write data into the memory cells, since a controlled lower voltage is used.

REFERENCES:
patent: 4506351 (1985-03-01), Scheuerlein et al.

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