Low power delay controlled zero sensitive sense amplifier

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S207000

Reexamination Certificate

active

07130236

ABSTRACT:
In one embodiment of the invention an integrated circuit is provided including a sense amplifier to read data from a memory cell that has a first transfer gate, a second transfer gate, a comparator, and a control circuit. The first transfer gate has a first pole coupled to a positive power supply. The second transfer gate has a first pole coupled to a bitline of the memory cell. The comparator has a first input coupled to a second pole of the first transfer gate, a second input coupled to a second pole of the second transfer gate, and an output coupled to the second input. The comparator compares signals on the first and second inputs and selectively generates a greater differential signal there-between. The control circuit turns off the comparator responsive to a logical zero being read from the memory cell avoiding the generation of the greater differential signal.

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Navid Azizi et al., “Low-Leakage Asymmetric-Cell SRAM,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 11, No. 4, Aug. 2003, pp. 701-715.
Yen-Jen Chang et al., “Value-Conscious Cache: Simple Technique for Reducing Cache Access Power,” Proceedings of the Design, Automation and Test in Europe Conference and Exhibition, 2004 IEEE, all pages.

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