Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-03-25
2008-03-25
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S009000, C257S285000, C257S300000
Reexamination Certificate
active
07348589
ABSTRACT:
A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current IWflows in the film surface direction of the second element portion for writing the magnetic information and a current IRflows in the film thickness direction of the first element portion for reading the magnetic information.
REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 2002/0105827 (2002-08-01), Redon et al.
patent: 2005/0185455 (2005-08-01), Huai
T. Miyazaki et al., “Giant Magnetic Tunneling Effect in Fe/Al2O3/Fe Junction”, Journal of Magnetism and Magnetic Materials, vol. 139 (1995), pp. L231-L234.
Hayakawa Jun
Ohno Hideo
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Pham Long
Reed Smith LLP
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