Low parasitic source inductance field-effect transistor device h

Details Low parasitic source inductance field-effect transistor device h Low parasitic source inductance field-effect transistor device h

1996-12-09

1998-03-31

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257207, 257287, 257276, H01L 2778

Patent

active

057341893

ABSTRACT:
An FET device is disclosed of the type typically fabricated on a substrate and including an active FET region, an input port, an output port, a common connection and via ground connections for coupling the common connection to a ground. The improvement includes the via connections being disposed on an outer periphery that bounds the active FET region which reduces the distance between the common connection and ground, and thereby reduces the associated common lead inductance.

REFERENCES:
patent: 4870478 (1989-09-01), Weitzel et al.
patent: 5023677 (1991-06-01), Truitt
patent: 5283452 (1994-02-01), Shih et al.
patent: 5324981 (1994-06-01), Kobiki et al.
patent: 5438212 (1995-08-01), Okaniwa

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