Low on resistance power MOSFET with variably spaced trenches...

Details Low on resistance power MOSFET with variably spaced trenches... Low on resistance power MOSFET with variably spaced trenches...

2006-07-11

2006-07-11

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000

Reexamination Certificate

active

07075147

ABSTRACT:
A power semiconductor device of the trench variety in which the trenches follow a serpentine path.

REFERENCES:
patent: 5910669 (1999-06-01), Chang et al.
patent: 6060747 (2000-05-01), Okumura et al.
patent: 6084264 (2000-07-01), Darwish

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