Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-05-12
1994-04-19
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257390, 257401, 257620, 257635, 257756, 257773, H01L 2701
Patent
active
053048318
ABSTRACT:
A submicron channel length is achieved in cells having sharp corners, such as square cells, by blunting the corners of the cells. In this way, the three dimensional diffusion effect is minimized, and punch through is avoided. Techniques are discussed for minimizing defects in the shallow junctions used for forming the short channel, including the use of a thin dry oxide rather than a thicker steam thermal over the body contact area, a field shaping p+ diffusion to enhance breakdown voltage, and TCA gathering. Gate-source leakage is reduced with extrinsic gathering on the poly backside, and intrinsic gathering due to the choice of starting material. Five masking step and six masking step processes are also disclosed for manufacturing a power MOSFET structure. This power MOSFET structure has an active region with a plurality of active cells as well as a termination region with a field ring or a row of inactive cells and a polysilicon field plate.
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Paolo Antognetti, Chapter 3.3, "Maximizing The Breakdown Voltage of Power MOSFET Structures", Power Integrated Circuits: Physics, Design and Applications, McGraw-Hill, 1986, pp. 3.14-3.27.
B. Jayant Baliga, Chapter 3, "Breakdown Voltage", Modern Power Devices, Wiley-Interscience, 1987, pp. 62-131.
Chang Mike
Chen Jun W.
Hshieh Fwu-Iuan
Owyang King
Pitzer Dorman C.
Siliconix incorporated
Wojciechowicz Edward
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