Low on resistance field effect transistor

Details Low on resistance field effect transistor Low on resistance field effect transistor

1992-02-03

1993-10-12

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257339, H01L 2978, H01L 2910

Patent

active

052528480

ABSTRACT:
A performance enhancing conductor (27) is employed to reduce a transistor's (10) on resistance and to also reduce the transistor's (10) parasitic gate to drain capacitance (32). The performance enhancing conductor (27) covers the transistor's (10) gate (22) and a portion of the drain region (18, 19) that is adjacent the transistor's channel (20). The performance enhancing conductor (27) is isolated from the gate (22) by an insulator (24, 26).

REFERENCES:
patent: 4679171 (1987-07-01), Logwood et al.
patent: 4757032 (1988-07-01), Contiero
patent: 4924277 (1990-05-01), Yamane et al.
Abbas et al., `Substrate Current Mem Cell`, IBM Tech vol. 19, No. 8, Jan. 77, pp. 3030-3031.
`Selective Ox of Titanium . . . `, IBM Tech, vol. 27, No. 10A, Mar. 85, pp. 5870-5875.
Itoh et al., `Extremely High Efficient UHF Power MOSFET . . . ` IEDM, 1983, pp. 83-97.

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