Low noise output buffer for semiconductor electronic circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257362, 326 27, 326 83, H01L 2976

Patent

active

06060753&

ABSTRACT:
A low-noise output stage for an electronic circuit integrated on a semiconductor substrate is disclosed. The low-noise output stage comprises a complementary CMOS transistor pair including a P-channel pull-up transistor and an N-channel pull-down transistor, connected across a first terminal of the electronic circuit to receive a supply voltage, and a second terminal of the electronic circuit to receive a second reference potential. The transistors are connected together to form an output terminal of the electronic circuit for connection to an external load. The pull-down transistor is formed in a three-well structure to prevent propagation of a discharge current from the external load through the semiconductor substrate.

REFERENCES:
European Search Report from European Patent Application 96830430.3, filed Jul. 31, 1996.

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