Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-08
2000-05-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 326 27, 326 83, H01L 2976
Patent
active
06060753&
ABSTRACT:
A low-noise output stage for an electronic circuit integrated on a semiconductor substrate is disclosed. The low-noise output stage comprises a complementary CMOS transistor pair including a P-channel pull-up transistor and an N-channel pull-down transistor, connected across a first terminal of the electronic circuit to receive a supply voltage, and a second terminal of the electronic circuit to receive a second reference potential. The transistors are connected together to form an output terminal of the electronic circuit for connection to an external load. The pull-down transistor is formed in a three-well structure to prevent propagation of a discharge current from the external load through the semiconductor substrate.
REFERENCES:
European Search Report from European Patent Application 96830430.3, filed Jul. 31, 1996.
Branchetti Maurizio
Campardo Giovanni
Zanardi Stefano
Eckert II George C.
Galanthay Theodore E.
Morris James H.
Saadat Mahshid
SGS--Thomson Microelectronics S.r.l.
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