Patent
1978-10-06
1980-05-13
Edlow, Martin H.
357 16, 357 30, H01L 2990
Patent
active
042031249
ABSTRACT:
Devices constructed according to the present invention provide low noise avalanche photodetectors. The devices are comprised of a sequence of at least four layers of semiconductor material of alternating opposed conductivity. In a first embodiment the layers form alternating homojunctions and heterojunctions at the interface between adjacent layers, and the bandgap of the layers on either side of the homojunctions decreases in the direction of the propagating signal. In another embodiment the layers form heterojunctions at the interfaces between adjacent layers; the layers are grouped into a sequence of pairs of layers where the bandgap of the two layers in each pair are substantially equal; and the bandgap of the layers in the sequence of pairs of layers decreases in the direction of the propagating signal. The effect of the structure of the multilayer device is to create traps for one sign of carrier and to prevent the trapped carrier from avalanching through amplification regions of the device.
REFERENCES:
patent: 2569347 (1951-09-01), Shockley
patent: 3369132 (1968-02-01), Fang
patent: 3757174 (1973-09-01), Shigemasa
patent: 3928261 (1976-09-01), Antyps
patent: 4015280 (1977-03-01), Matsushita
patent: 4103312 (1978-07-01), Chang
patent: 4110778 (1978-08-01), Eden
Gordon James P.
Nahory Robert E.
Pollack Martin A.
Worlock John M.
Bell Telephone Laboratories Incorporated
Dubosky Daniel D.
Edlow Martin H.
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