Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-03-05
1998-11-17
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257275, 257728, 333246, H01L 310328, H01P 308
Patent
active
058380310
ABSTRACT:
4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.
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Kobayashi Kevin Wesley
Oki Aaron Kenji
Streit Dwight Christopher
Umemto Donald Katsu
TRW Inc.
Whitehead Jr. Carl W.
Yatsko Michael S.
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