Non-volatile semiconductor memory device having trapped charges

Details Non-volatile semiconductor memory device having trapped charges Non-volatile semiconductor memory device having trapped charges

1997-05-15

1999-07-27

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 3651853, 365218, G11C 1606

Patent

active

059301732

ABSTRACT:
In a method of initializing a flash EEPROM, a pre-programming operation of a predetermined data is first performed in a plurality of memory cells of a memory cell array and then an erasing operation is performed to the plurality of memory cells. Then, a verifying operation of whether the erasing operation is correctly performed is performed. During an initializing operation composed of the pre-programming operation, the erasing operation and the verifying operation, electrons or holes trapped in a tunnel oxide film are pulled out.

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