Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-16
1999-09-21
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257365, 257401, H01L 2362
Patent
active
059557630
ABSTRACT:
A multi-gate-finger MOSFET structure positions the gate element over a channel between drain and source diffusion regions, such that the entire structure is within the active region in a substrate. The gate/channel-to-drain and gate/channel-to-source diffusion edges are continuous along the gate/channel layout, so as to cascade the snap-back action to enhance uniform turn on of the entire gate element during an ESD event. In addition, the gate signal RC delay is sufficient to provide noise suppression of the output voltage when the MOSFET is used as a high current-drive CMOS output buffer.
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Hardy David B.
Winbond Electronics Corp.
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