Low nitrogen concentration carbonaceous material and...

Details Low nitrogen concentration carbonaceous material and... Low nitrogen concentration carbonaceous material and...

2005-04-19

2005-04-19

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S800000, C423S460000, C423S461000

Reexamination Certificate

active

06881680

ABSTRACT:
The present invention relates to a low nitrogen concentration carbonaceous material with a nitrogen concentration according to glow discharge mass spectrometry of 100 ppm or less, as well as a manufacturing method thereof are provided. A carbonaceous material subjected to a high purification treatment in a halogen gas atmosphere is heat treated under a pressure of 100 Pa or less and at a temperature of 1800° C. or higher, releasing nitrogen in the carbonaceous material and then cooling the material under a pressure of 100 Pa or less or in a rare gas atmosphere.

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Anonymous, Internet Article, Onlinel Retrieved from the Internet: <URL:http://web.archive.org/web/20010815080339/http://www.tevtechllc.com/purificationsystem.html>, pp. 1-3, XP-002221496, “GRAPHITE PURIFICATION SYSTEM”, Nov. 19, 2002.

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