Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-03-26
2000-07-11
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118728, 118729, 118500, C23C 1600
Patent
active
060866802
ABSTRACT:
A wafer susceptor for semiconductor processing devices, having a thermal mass which is close to that of the wafer. The similarity between the thermal masses of the susceptor and wafer enables a higher throughput and reduces temperature uniformities across the wafer. The low-mass susceptor may be made of a solid, thin disk with or without a central wafer support recess. A wafer temperature sensing aperture may be provided in the center of the susceptor. Alternatively, a low-mass susceptor is formed with an open-celled silicon carbide foam, with or without a thin skin of solid silicon carbide on the top forming a wafer support surface, or completely encapsulating the open-celled foam. The wafer is preferably supported on a plurality of pins extending upward from the susceptor. In a third embodiment, an ultra low-mass susceptor is formed as a ring with a central throughbore and a surrounding wafer support shelf below an outer ledge.
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"Shaping the Future in Semiconductor Processing," advertisment, Ceramic Solutions, vol. 73, No. 7, Jul. 1994; attached advertisements (circa 1993) .
Foster Derrick W.
van der Jeugd Cornelius A.
Wengert John F.
ASM America Inc.
Bueker Richard
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