Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-11
2006-04-11
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000
Reexamination Certificate
active
07026673
ABSTRACT:
Techniques for attaining high performance magnetic memory devices are provided. In one aspect, a magnetic memory device having one or more free magnetic layers is provided. The one or more free magnetic layers have a low magnetization material adapted to have a saturation magnetization of less than or equal to about 600 electromagnetic units per cubic centimeter. The device may be configured such that a ratio of mean switching field associated with an array of non-interacting magnetic memory devices and a standard deviation of the switching field is greater than or equal to about 20. The magnetic memory device may have a magnetic random access memory (MRAM) device. A method of producing a magnetic memory device is also provided.
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Cheung, Esq. Wan Yee
Nhu David
Ryan & Mason & Lewis, LLP
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