Low leakage tristatable MOS output driver

Details Low leakage tristatable MOS output driver Low leakage tristatable MOS output driver

1998-03-31

2000-08-22

Tokar, Michael

Electronic digital logic circuitry

Tri-state

With field-effect transistor

326 27, 326 83, H03K 1900, H03K 1902, H03K 190175, H03K 19094

Patent

active

061078298

ABSTRACT:
In accordance with the present invention there is provided a tristatable digital MOS output buffer/driver having a significantly reduced subthreshold leakage current. The buffer of the present invention comprises three P-channel transistor devices and three N-channel transistor devices. A reduced subthreshold leakage current is achieved by having the source of the output N-channel transistor device and the output P-channel transistor device connected to nodes having a variable voltage. This adjusts the source-to-body voltages of the output N-channel and P-channel transistor devices to be equal in magnitude to the voltage of the positive supply, resulting in the reduction of subthreshold leakage currents.

REFERENCES:
patent: 5381062 (1995-01-01), Morris
patent: 5418476 (1995-05-01), Strauss
patent: 5541528 (1996-07-01), Montoye et al.
patent: 5587671 (1996-12-01), Zagar et al.
patent: 5850153 (1998-12-01), Harris et al.
patent: 5889420 (1999-03-01), Poechmueller

Affiliated with

Also associated with

Rating

Low leakage tristatable MOS output driver does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low leakage tristatable MOS output driver, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low leakage tristatable MOS output driver will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-585155