Low leakage protection device

Details Low leakage protection device Low leakage protection device

2011-01-11

2011-01-11

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S120000, C257S173000, C257S566000, C257S511000, C257SE27057, C257S546000, C438S529000, C438S224000, C438S228000, C438S237000, C438S326000

Reexamination Certificate

active

07868387

ABSTRACT:
A high-voltage, low-leakage, bidirectional electrostatic discharge (ESD, or other electrical overstress) protection device includes a doped well disposed between the terminal regions and the substrate. The device includes an embedded diode for conducting current in one direction, and a transistor feedback circuit for conducting current in the other direction. Variations in the dimensions and doping of the doped well, as well as external passive reference via resistor connections, allow the circuit designer to flexibly adjust the operating characteristics of the device, such as trigger voltage and turn-on speed, to suit the required mixed-signal operating conditions.

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