Low leakage current static random access memory

Details Low leakage current static random access memory Low leakage current static random access memory

2005-11-29

2005-11-29

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S149000, C365S189090

Reexamination Certificate

active

06970374

ABSTRACT:
A static random access memory (SRAM) has a plurality of SRAM cells, a first switch unit, a second switch unit, and a capacitor. During read/write operations of the SRAM cells, the first switch unit and the second switch unit are turned on so that two power terminals of the SRAM cells respectively electrically connect to VDDand VSSand that the capacitor electrically connects between VDDand VSS. When the SRAM cells are not accessed, the first switch unit and the second switch unit are turned off and the capacitor keeps a voltage gap between the two power terminals of the SRAM cells greater than a predetermined value.

REFERENCES:
patent: 5325325 (1994-06-01), Azuma
patent: 6314041 (2001-11-01), Frey

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