Low leakage active pixel using spacer protective mask compatible

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257233, 257290, H01L 31062, H01L 27148

Patent

active

061371270

ABSTRACT:
A pixel cell structure having a nonsilicided photodiode overcomes problems associated with the absorption of incident light by silicided surfaces. Furthermore, a photodiode access transistor having a partially silicided gate is interposed between the photodiode and the pixel cell transistors performing reset and row select functions, thereby allowing isolation of the photodiode from leakage associated with silicided junctions. Selective application of voltage to the transistors of the pixel structure according to a clocking sequence permits interaction of the photodiode and the MOS transistors making up the pixel cell, while minimizing exposure of the photodiode to leakage and stress associated with these silicided MOS transistors.

REFERENCES:
patent: 4742025 (1988-05-01), Ohyu et al.
patent: 5342798 (1994-08-01), Huang
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5413969 (1995-05-01), Huang
patent: 5625210 (1997-04-01), Lee et al.

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