Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-16
2007-10-16
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C438S763000, C438S931000, C257SE23116, C257SE23131, C257SE23132, C257SE23133, C257SE23134
Reexamination Certificate
active
10869474
ABSTRACT:
Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.
REFERENCES:
patent: 4656110 (1987-04-01), Yamazaki
patent: 5324690 (1994-06-01), Gelatos et al.
patent: 5654208 (1997-08-01), Harris et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 6045877 (2000-04-01), Gleason et al.
patent: 6100587 (2000-08-01), Merchant et al.
patent: 6159871 (2000-12-01), Laboda et al.
patent: 6197688 (2001-03-01), Simpson
patent: 6352945 (2002-03-01), Matsuki et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6399484 (2002-06-01), Yamasaki et al.
patent: 6417092 (2002-07-01), Jain et al.
patent: 6424044 (2002-07-01), Han et al.
patent: 6432846 (2002-08-01), Matsuki
patent: 6670715 (2003-12-01), Yang et al.
patent: 6774489 (2004-08-01), Russell et al.
patent: 6790767 (2004-09-01), Lee
patent: 6855645 (2005-02-01), Tang et al.
patent: 6881683 (2005-04-01), Matsuki et al.
patent: 6967405 (2005-11-01), Yu et al.
patent: 7064088 (2006-06-01), Hyodo et al.
patent: 2003/0001275 (2003-01-01), Sambucetti et al.
patent: 2003/0057553 (2003-03-01), DelaRosa et al.
patent: 2003/0068881 (2003-04-01), Xia et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0232514 (2003-12-01), Kim et al.
patent: 2004/0067308 (2004-04-01), Zheng et al.
patent: 2004/0084774 (2004-05-01), Li et al.
patent: 2004/0113279 (2004-06-01), Chen et al.
patent: 2004/0124531 (2004-07-01), Venkatraman et al.
patent: 2004/0207084 (2004-10-01), Hedrick et al.
patent: 2005/0014361 (2005-01-01), Nguyen et al.
patent: 2005/0042889 (2005-02-01), Lee et al.
patent: 2005/0202685 (2005-09-01), Huang et al.
patent: 2005/0233555 (2005-10-01), Rajagopalan et al.
patent: 2005/0236711 (2005-10-01), Wang et al.
patent: 2005/0245071 (2005-11-01), Wu et al.
patent: 2006/0019486 (2006-01-01), Yu et al.
patent: 2006/0110931 (2006-05-01), Fukazawa et al.
Yu, et al., “Novel Film for Copper Diffusion Barrier”, Novellus Systems, Inc., U.S. Appl. No. 10/670,660, filed Sep. 24, 2003, pp. 1-26.
Yu, et al., “Low-K B-Doped SIC Copper Diffusion Barrier Films”, Novellus Systems, Inc., U.S. Appl. No. 10/915,117, filed Aug. 9, 2004, pp. 1-22.
Masahiko Maeda, et al., “A Low-Permittivity Interconnection Using an SiBN Interlayer”, Sep. 1989, IEEE Transactions on Electron Devices, vol. 36, No. 9.
Takashi Sugino, et al., “Synthesis of boron nitride film with low dielectric constant for its application to silicon ultralarge scale integrated semiconductors”, 2001 Elsevier Science B.V., Diamond and Related Materials 1275-1379.
Yu et al., “Boron-Doped SiC Copper Diffusion Barrier Films”, Novellus Systems, Inc., U.S. Appl. No. 11/373,847, filed Mar. 8, 2006, pp. 1-22.
U.S. Office Action mailed Dec. 11, 2006, from related U.S. Appl. No. 10/915,117.
U.S. Office Action mailed May 3, 2006, from U.S. Appl. No. 10/915,117.
U.S. Office Action mailed Sep. 7, 2006, from U.S. Appl. No. 10/915,117.
Billington Karen
Carris Michael
Crew William
Fu Haiying
Tang Xingyuan
Beyer & Weaver, LLP
Estrada Michelle
Novellus Systems Inc.
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