Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-12-31
2010-11-09
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S900000, C257SE27060, C257SE29131
Reexamination Certificate
active
07829943
ABSTRACT:
A multi-component low-k isolation spacer for a conductive region in a semiconductor structure is described. In one embodiment, a replacement isolation spacer process is utilized to enable the formation of a two-component low-k isolation spacer adjacent to a sidewall of a gate electrode in a MOS-FET device.
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Non-Final Office Action from U.S. Appl. No. 11/500,628, mailed Jul. 8, 2009, 13 pages.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Monbleau Davienne
Rodela Eduardo A
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