Coating processes – Heat decomposition of applied coating or base material
Reexamination Certificate
2008-03-24
2010-10-26
Cleveland, Michael (Department: 1712)
Coating processes
Heat decomposition of applied coating or base material
Reexamination Certificate
active
07820242
ABSTRACT:
A composition of matter and a structure fabricated using the composition. The composition comprising: a resin; polymeric nano-particles dispersed in the resin, each of the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscible with the resin; and a solvent, the solvent volatile at a first temperature, the resin cross-linkable at a second temperature, the polymeric nano-particle decomposable at a third temperature, the third temperature higher than the second temperature, the second temperature higher than the first temperature, wherein a thickness of a layer of the composition shrinks by less than about 3.5% between heating the layer from the second temperature to the third temperature.
REFERENCES:
patent: 5895263 (1999-04-01), Carter et al.
patent: 6093636 (2000-07-01), Carter et al.
patent: 6333141 (2001-12-01), Carter et al.
patent: 6630520 (2003-10-01), Bruza et al.
patent: 6667147 (2003-12-01), Gallagher et al.
patent: 2003/0059723 (2003-03-01), Gallagher et al.
patent: 2003/0168251 (2003-09-01), Hawker et al.
patent: 2003/0186168 (2003-10-01), Gallagher et al.
patent: 2003/0186169 (2003-10-01), Gallagher et al.
patent: 2004/0053033 (2004-03-01), Niu et al.
patent: 2004/0137241 (2004-07-01), Lin et al.
patent: 2004/0137243 (2004-07-01), Gleason et al.
patent: 2004/0161922 (2004-08-01), Gallagher et al.
patent: 2004/0191417 (2004-09-01), Yontz et al.
patent: 2004/0213911 (2004-10-01), Misawa et al.
patent: 2005/0070124 (2005-03-01), Miller et al.
patent: 2006/0142504 (2006-06-01), Ree et al.
patent: 2002003683 (2002-01-01), None
Kim et al.; Fabrication of Multilayered Nanapourous Poly(methyl silsesquioxane); Advanced Materials 2002; vol. 14, No. 22, Nov. 18; pp. 1637-1639.
Calvert et al.; A New Approach to Ultralow-k Dielectrics; Semiconductor International; Nov. 2003, pp. 56-60.
Dubois Geraud Jean-Michel
Hedrick James Lupton
Kim Ho-Cheol
Lee Victor Yee-Way
Magbitang Teddie Peregrino
Cleveland Michael
International Business Machines - Corporation
Schmeiser Olsen & Watts
Vetere Robert
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