Low k interlevel dielectric layer fabrication methods

Details Low k interlevel dielectric layer fabrication methods Low k interlevel dielectric layer fabrication methods

2006-06-27

2006-06-27

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S777000, C438S780000, C438S781000, C438S783000, C438S786000, C438S793000, C438S794000, C438S798000

Reexamination Certificate

active

07067414

ABSTRACT:
A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3.5 is formed over the substrate. After forming the dielectric layer, it is exposed to a plasma including oxygen effective to reduce the dielectric constant to below what it was prior to the exposing. A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least patially formed thereon. In a chamber, an inter-level dielectric layer including carbon and having a dielectric constant no greater than 3.5 is plasma-enhanced chemical vapor deposited over the substrate at subatmospheric pressure. After forming the dielectric layer, it is exposed to a plasma including oxygen at subatmospheric pressure effective to reduce the dielectric constant by at least 10% below what it was prior to the exposing. The exposing occurs without removing the substrate from the chamber between the depositing and the exposing, and pressure within the chamber is maintained at subatmospheric pressure between the depositing and the exposing.

REFERENCES:
patent: 4158717 (1979-06-01), Nelson
patent: 4474975 (1984-10-01), Clemons et al.
patent: 4523214 (1985-06-01), Hirose et al.
patent: 4592129 (1986-06-01), Legge
patent: 4600671 (1986-07-01), Saitoh et al.
patent: 4648904 (1987-03-01), DePasquale et al.
patent: 4695859 (1987-09-01), Guha et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 5711987 (1988-07-01), Bearinger et al.
patent: 4805683 (1989-02-01), Magdo et al.
patent: 4863755 (1989-09-01), Hess et al.
patent: 4954867 (1990-09-01), Hosaka
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5034348 (1991-07-01), Hartswick et al.
patent: 5036383 (1991-07-01), Mori
patent: 5061509 (1991-10-01), Naito et al.
patent: 5219613 (1993-06-01), Fabry et al.
patent: 5234869 (1993-08-01), Mikata et al.
patent: 5270267 (1993-12-01), Ouellet
patent: 5302366 (1994-04-01), Schuette et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5340621 (1994-08-01), Matsumoto et al.
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5376591 (1994-12-01), Maeda et al.
patent: 5441797 (1995-08-01), Hogan et al.
patent: 5472827 (1995-12-01), Ogawa et al.
patent: 5472829 (1995-12-01), Ogawa
patent: 5498555 (1996-03-01), Lin
patent: 5536857 (1996-07-01), Narula et al.
patent: 5541445 (1996-07-01), Quellet
patent: 5591494 (1997-01-01), Sato et al.
patent: 5591566 (1997-01-01), Ogawa
patent: 5593741 (1997-01-01), Ikeda
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5639687 (1997-06-01), Roman et al.
patent: 5641607 (1997-06-01), Ogawa et al.
patent: 5648202 (1997-07-01), Ogawa et al.
patent: 5661093 (1997-08-01), Ravi et al.
patent: 5667015 (1997-09-01), Harestad et al.
patent: 5671297 (1997-09-01), Koppe et al.
patent: 5674356 (1997-10-01), Nagayama
patent: 5677111 (1997-10-01), Ogawa
patent: 5698352 (1997-12-01), Ogawa et al.
patent: 5709741 (1998-01-01), Akamatsu et al.
patent: 5710067 (1998-01-01), Foote et al.
patent: 5731242 (1998-03-01), Parat et al.
patent: 5741721 (1998-04-01), Stevens
patent: 5747388 (1998-05-01), Kūsters et al.
patent: 5753320 (1998-05-01), Mikoshiba et al.
patent: 5759755 (1998-06-01), Park et al.
patent: 5801399 (1998-09-01), Hattori et al.
patent: 5817549 (1998-10-01), Yamazaki et al.
patent: 5831321 (1998-11-01), Nagayama
patent: 5838052 (1998-11-01), McTeer
patent: 5840610 (1998-11-01), Gilmer et al.
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5872385 (1999-02-01), Taft et al.
patent: 5874367 (1999-02-01), Dobson
patent: 5883011 (1999-03-01), Lin et al.
patent: 5960289 (1999-09-01), Tsui et al.
patent: 5962581 (1999-10-01), Hayase et al.
patent: 5968324 (1999-10-01), Cheung et al.
patent: 5968611 (1999-10-01), Kaloyeros et al.
patent: 5985519 (1999-11-01), Kakamu et al.
patent: 5994217 (1999-11-01), Ng
patent: 5994730 (1999-11-01), Shrivastava et al.
patent: 6001741 (1999-12-01), Alers
patent: 6001747 (1999-12-01), Annapragada
patent: 6008124 (1999-12-01), Sekiguchi et al.
patent: 6017814 (2000-01-01), Tsai et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6022404 (2000-02-01), Ettlinger et al.
patent: 6030901 (2000-02-01), Hopper et al.
patent: 6040619 (2000-03-01), Wang et al.
patent: 6057217 (2000-05-01), Uwasawa
patent: 6060765 (2000-05-01), Maeda
patent: 6060766 (2000-05-01), Mehta et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6632712 (2000-07-01), Ang et al.
patent: 6121133 (2000-09-01), Iyer et al.
patent: 6133613 (2000-10-01), Yao et al.
patent: 6133618 (2000-10-01), Steiner
patent: 6140151 (2000-10-01), Akram
patent: 6143670 (2000-11-01), Cheng et al.
patent: 6153504 (2000-11-01), Shields et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6200863 (2001-03-01), Xiang et al.
patent: 6218929 (2001-04-01), Foote et al.
patent: 6284677 (2001-09-01), Hsiao et al.
patent: 6348407 (2002-02-01), Gupta et al.
patent: 6373114 (2002-04-01), Jeng et al.
patent: 6403464 (2002-06-01), Chang
patent: 6429115 (2002-08-01), Tsai et al.
patent: 6432791 (2002-08-01), Hutter et al.
patent: 6435943 (2002-08-01), Chang et al.
patent: 6436808 (2002-08-01), Ngo et al.
patent: 6444593 (2002-09-01), Ngo et al.
patent: 6465372 (2002-10-01), Xia et al.
patent: 6486057 (2002-11-01), Yeh et al.
patent: 6486061 (2002-11-01), Xia et al.
patent: 6492688 (2002-12-01), Ilg
patent: 6498084 (2002-12-01), Bergemont
patent: 6503818 (2003-01-01), Jang
patent: 6518122 (2003-02-01), Chan et al.
patent: 6627535 (2003-09-01), MacNeil et al.
patent: 6638875 (2003-10-01), Han et al.
patent: 6720247 (2004-04-01), Kirkpatrick et al.
patent: 6723631 (2004-04-01), Noguchi et al.
patent: 6790778 (2004-09-01), Cheng et al.
patent: 2001/0003064 (2001-06-01), Ohto
patent: 2001/0019868 (2001-09-01), Gonzalez et al.
patent: 2002/0016085 (2002-02-01), Huang et al.
patent: 2002/0098684 (2002-07-01), Li et al.
patent: 2003/0013311 (2003-01-01), Chang et al.
patent: 2003/0077916 (2003-04-01), Xu et al.
patent: 2003/0164354 (2003-09-01), Hsieh et al.
patent: 2003/0173671 (2003-09-01), Hironaga et al.
patent: 2003/0201465 (2003-10-01), Ryuzaki et al.
patent: 2003/0207594 (2003-11-01), Catabay et al.
patent: 2003/0235979 (2003-12-01), Yuasa
patent: 2004/0071878 (2004-04-01), Schuhmacher et al.
patent: 2004/0126671 (2004-07-01), Smith et al.
patent: 2004/0175933 (2004-09-01), Shishida et al.
patent: 2005/0023691 (2005-02-01), Watanabe et al.
patent: 2005/0064698 (2005-03-01), Chang et al.
patent: 2005/0191828 (2005-09-01), Al-Bayati et al.
patent: 0 471 185 (1991-07-01), None
patent: 0464515 (1992-01-01), None
patent: 0 588 087 (1993-08-01), None
patent: 0 588 087 (1993-08-01), None
patent: 0 778 496 (1996-05-01), None
patent: 0771886 (1997-05-01), None
patent: 593727 (1947-10-01), None
patent: 63157443 (1988-06-01), None
patent: 5-263155 (1993-10-01), None
patent: 6232113 (1994-08-01), None
patent: 6-244172 (1994-09-01), None
patent: 7201716 (1995-08-01), None
patent: 08-045926 (1996-02-01), None
patent: 8046186 (1996-02-01), None
patent: 8046188 (1996-02-01), None
patent: 8051058 (1996-02-01), None
patent: 8078322 (1996-03-01), None
patent: 09055351 (1997-02-01), None
patent: 63316476 (1998-12-01), None
patent: 06067019 (1999-09-01), None
patent: 471112 (2002-01-01), None
Loboda et al., “Using Trimethylsilane to Improve Safety, Throughput and Versatility in PECVD Processes”, Electrochemical Proceedings, vol. 97-10, pp. 443-453.
Laxman et al., “Synthesizing Low k CVD materials for Fab Use”, Semiconductor International (Nov. 2000), pp. 95-102.
Anonymous, “New Gas Helps Make Faster ICs”, Machine Design, (Nov. 4, 1999), p. 118.
20029, US99, Search Report.
20010, US99, Search Report.
0 942330, Sep. 1999, EPO (Joubert).
Text: Jenkins, F. etal., “Fundamentals of Optics”, Properties of Light, pp. 9-10, (No date).
Text: Wolf, S. etal., “Silicon Processing for the VLSI Era”, vol. 1, pp. 437-441, (No date).
D.R.

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