Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-06-26
2007-06-26
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S619000, C438S622000, C257S637000
Reexamination Certificate
active
10968786
ABSTRACT:
One embodiment of a method for forming a low-k dielectric for a semiconductor device assembly comprises forming a silicon dioxide layer, then forming a patterned masking layer such as silicon nitride on the silicon dioxide. Using the patterned nitride layer as a pattern, the silicon dioxide is etched to form a plurality of hemispherical microcavities in the silicon dioxide. Openings in the patterned nitride are filled, then another layer is formed over the silicon nitride layer using the silicon nitride as a support over the microcavities. An inventive structure resulting from the method is also described.
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Jr. Carl Whitehead
Martin Kevin D.
Micro)n Technology, Inc.
Rodgers Colleen E.
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