Low-k dielectric materials and processes

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S787000, C427S255120, C427S255390

Reexamination Certificate

active

06905981

ABSTRACT:
Improved dielectric materials suitable for use in integrated circuits and computer systems are provided by a chemical vapor deposition process employing fluoroalkane precursors.

REFERENCES:
patent: 4781942 (1988-11-01), Leyden et al.
patent: 4863755 (1989-09-01), Hess et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 4992306 (1991-02-01), Hochberg et al.
patent: 5011706 (1991-04-01), Tarhay et al.
patent: 5028566 (1991-07-01), Lagendijk
patent: 5231058 (1993-07-01), Maeda et al.
patent: 5240813 (1993-08-01), Watanabe et al.
patent: 5244698 (1993-09-01), Ishihara et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5324539 (1994-06-01), Maeda et al.
patent: 5380555 (1995-01-01), Mine et al.
patent: 5433786 (1995-07-01), Hu et al.
patent: 5494712 (1996-02-01), Hu et al.
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5563105 (1996-10-01), Dobuzinsky et al.
patent: 5703404 (1997-12-01), Matsuura
patent: 5840821 (1998-11-01), Nakano et al.
patent: 5876798 (1999-03-01), Vassiliev
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 5998522 (1999-12-01), Nakano et al.
patent: 6045877 (2000-04-01), Gleason et al.
patent: 6051321 (2000-04-01), Lee et al.
patent: 6051508 (2000-04-01), Takase et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6068884 (2000-05-01), Rose et al.
patent: 367 004 (1993-12-01), None
patent: 0 436 185 (1996-03-01), None
patent: 0 706 216 (1996-04-01), None
patent: 0 771 886 (1997-05-01), None
patent: 0 723 600 (1999-07-01), None
patent: 935 283 (1999-08-01), None
patent: 0 960 958 (1999-12-01), None
patent: 09293716 (1997-11-01), None
patent: 11176829 (1999-07-01), None
patent: WO 97/40207 (1997-10-01), None
patent: WO 97/41592 (1997-11-01), None
patent: WO 99/21706 (1999-05-01), None
patent: WO 99/41423 (1999-08-01), None
patent: WO 99/55526 (1999-11-01), None
patent: WO 99/60621 (1999-11-01), None
Shirafuji, PECVD of Fluorocarbons/SiO Composite Thin Films using C4F8 and HMDSO, pp. 57-75.
Bayer et al.,Overall kinetics of SIOx remote—PECVD using different organosilicon monomers, Surface and Coatings Technology, 116-119 (1999) 874-878.
Berjoan et al.,XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomers, J. Phys. IV France 9(1999) pp. 1059-1068.
Constant et al.,Some Properties of amorphous SIXCI-x(H)alloys prepared by CVD from various organosilicon compounds, Solid State Chemistry, 1982, pp. 267-270.
Deville et al.,An AES study of the influence of carbon on the chemical structure of some oxide films deposited by PEVCD of organosilicon precursors, Applied Surface Science 137 (1999) 136-141.
Fonseca et al.,Plasma Polymerization of Tetramethylsilane, Am. Chemical Society, 1993, 5, 1676-1682.
Inoue et al.,Mass spectroscopy in plasma-enhaced chemical vapor deposition of silicon-oxide films using tetramethoxylsilane, Thin Solid Films 316(1998) 79-84.
Inoue et al.,Spectroscopic studies on preparation of silicon oxide films by PECVD using organosilicon compounds, Plasma Sources Sci. Technol. 5 (1996) 339-343.
Loboda, M.J.,New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes, Microelectronic Enginering 50 (2000) 15-23.
Nguyen et al.,Plasma organosilicon polymers, J. Electrochem. Soc., Aug. 1985, pp. 1925-1932.
Shirafuji et al.,PE-CVD of Fluorocarbon/SiO composite thin films using C4F8 and HMDSO1, Plasmas and Polymers, Vo. 4, No. 1, 1999, pp. 57-75.
Shirafuji et al.,PE-CVD of fluorocarbon/silicon oxide composite thin films from TFE and HMDSO, Mat. Res. Soc. Symp. Proc. vol. 544, pp. 173-178.
Shirafuji et al.,Plasma copolymerization of tetrafluoroethylene/hexamethyldisiloxane and in Situ Fourier Transform Infrared spectroscopy of its gas phase, Jpn. J. Appl. Phys.vol. 38 (1999) pp. 4520-4526.
Sugahara et al.,Low Dielectric constant carbon containing SiO2 films deposited by PECVD technique using a novel CVD precursor, DUMIC Conference, Feb. 10-11, 1997, pp. 19-25.
Thomas et al.,Plasma etching and surface analysis of a SIC:H films deposited by low temperature plasma enhanced chemical vapor deposition, Mat. Res. Soc. Symp. Proc. Vo. 334, 1994, pp. 445-450.
Matsuki, N., U.S. Appl. No. 09/243,156Silicone Polymer insulation film on semiconductor substrate and method for forming the film, filed Feb. 2, 1999.
Indrajit Banerjee, et al., “Characterization of Chemical Vapor Deposited Amorphous Flourocarbons for Low Dielectric Constant Interlayer Dielectrics,” J. Electrochem. Soc. vol. 146(6), p. 2219(1999).
Sang-Soo Han, et al., “Deposition of Fluorinated Amorphous Carbon Thin Films as a Low-Dielectric Constant Material,” J. Electrochem. Soc., vol. 148(9), p. 3383 (1999).
H. Beckers, et al., “Synthesis and Properties of (Triflouromethyl) trichlorosilane, a Versatile Precursor for CF3SI Compounds, ” J. Organometal, Chem. vol. 316, pp. 41-50, (1986).
C.A. Costello and J.J. McCarthy, “Introduction of Organic Functional Groups onto the Surface of Poly(tetrafluoreothylene),” Proceedings of the ACS Divison of Polymeric Materials Science and Engineering, vol. 55 p. 893 (1986).
K.G. Sharp and T.D. Coyle. “Synthesis and Some Properties of Trifluoro(trifluoromethyl) silane,” J. Fluorine Chem., vol. Q, pp. 249-251 (1971/72).
Limb, Scott J., et al., “Growth of fluorcarbon polymer thin films with high CF2 fractions and low dangling bond concentrations by thermal chemical vapor deposition,” App. Phys. Lett, vol. 68(20), p. 2810 (1996).
Washburne, Stephen S., et al., “Chioraminosilanes I: The Preparation of Chioro(Dimethylamino Hydrogen Silanes,” Inorg. Nucl. Chem. Letters vol. 5, pp. 17-19, Pergaomon Press.
Savage, Charles R., et al., “Spectroscopic Characterization of Films Obtained in Pulsed Radio-Frequency Plasma Discharges of Fluorocarbon Monomers,” Structure-Property Relations in Polymers, pp. 745-768, America Chemical Society, (1993).
Sharp, K.G., et al., “Perflouro(alkylsilanes). II: Trifluoro(trifluoromethyl) silane and Trifluoro(pentafluoroethyl) silane,” Inorg. Chem., vol. 11, No. 6, pp. 1259-1264, (1792).
Pam Frost Gorder, “Researchers Pioneer Rechniques to Lubicate Microdevices,” Research News, Ohio State University, http://www.acs.ohio-state.edu/units/research, (Mar. 23, 2001).
Chandrasekhar et al., “New Silicon-Carbon Materials Incorporating Si4C Building Blocks” Mat. Res. Soc. Symp. Proc. vol. 441, Materials Research Society (1997).

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