Low-k dielectric layer based upon carbon nanostructures

Details Low-k dielectric layer based upon carbon nanostructures Low-k dielectric layer based upon carbon nanostructures

2007-06-19

2007-06-19

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S767000, C257SE51040, C257SE21575, C438S643000, C438S658000

Reexamination Certificate

active

10711764

ABSTRACT:
A low-k dielectric material for use in the manufacture of semiconductor devices, semiconductor structures using the low-k dielectric material, and methods of forming such dielectric materials and fabricating such structures. The low-k dielectric material comprises carbon nanostructures, like carbon nanotubes or carbon buckyballs, that are characterized by an insulating electronic state. The carbon nanostructures may be converted to the insulating electronic state either before or after a layer containing the carbon nanostructures is formed on a substrate. One approach for converting the carbon nanostructures to the insulating electronic state is fluorination.

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