Low-k dielectric film with good mechanical strength

Details Low-k dielectric film with good mechanical strength Low-k dielectric film with good mechanical strength

2005-11-15

2005-11-15

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S637000, C438S645000, C438S648000, C438S687000

Reexamination Certificate

active

06964919

ABSTRACT:
The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening.The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

REFERENCES:
patent: 6472306 (2002-10-01), Lee et al.
patent: 6806161 (2004-10-01), Ko et al.
patent: 2003/0224593 (2003-12-01), Wong

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