Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-08-16
2011-08-16
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S624000, C257SE21581
Reexamination Certificate
active
07998880
ABSTRACT:
A low k dielectric stack having an effective dielectric constant k, of about 3.0 or less, in which the mechanical properties of the stack are improved by introducing at least one nanolayer into the dielectric stack. The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of the films within the stack and without the need of subjecting the inventive dielectric stack to any post treatment steps. Specifically, the present invention provides a low k dielectric stack that comprises at least one low k dielectric material and at least one nanolayer present within the at least one low k dielectric material.
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PCT/US2006/008449—Filed Mar. 8, 2006—PCT ISR/WO/.
Ida Kensaku
Lane Sarah L.
Liniger Eric G.
Nguyen Son V.
Restaino Darryl D.
International Business Machines - Corporation
Li Wenjie
Pham Thanhha
Scully , Scott, Murphy & Presser, P.C.
Sony Corporation
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