Low-k BSG gap fill process using HDP

Details Low-k BSG gap fill process using HDP Low-k BSG gap fill process using HDP

1998-11-03

2000-11-21

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 427569, 427585, 427590, 438513, 438778, C23L 1434

Patent

active

061497797

ABSTRACT:
A low dielectric constant gap-fill process using high density plasma (HDP) deposition is provided for depositing a boron-doped silicon oxide layer to eliminate the damaging effects of fluorine on underlying circuitry while still maintaining a low dielectric constant for an intermetal dielectric (IMD) layer.

REFERENCES:
patent: 5100505 (1992-03-01), Cathy, Jr.
patent: 5133986 (1992-07-01), Blum et al.
patent: 5776834 (1998-07-01), Avanzino et al.
patent: 5817562 (1998-10-01), Chang et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
JP 2-285066 abstract, Nov. 1990.

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