Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-07-03
2007-07-03
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S760000, C257SE21021, C438S627000, C438S643000, C438S653000, C438S687000
Reexamination Certificate
active
10915117
ABSTRACT:
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
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Yu, et al., “Novel Film for Copper Diffusion Barrier”, Novellus Systems, Inc., U.S. Appl. No. 10/670,660, filed Sep. 24, 2003, pp. 1-26.
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Billington Karen
Carris Michael
Crew William
Gupta Atul
Mountsier Thomas W.
Beyer & Weaver, LLP
Estrada Michelle
Novellus Systems Inc.
Stark Jarrett J.
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