Low K and ultra low K SiCOH dielectric films and methods to...

Details Low K and ultra low K SiCOH dielectric films and methods to... Low K and ultra low K SiCOH dielectric films and methods to...

2007-10-16

2007-10-16

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S783000, C438S789000, C438S790000

Reexamination Certificate

active

11268106

ABSTRACT:
Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.

REFERENCES:
patent: 6284655 (2001-09-01), Marsh
patent: 6472306 (2002-10-01), Lee et al.
patent: 6630401 (2003-10-01), Sneh
patent: 6764774 (2004-07-01), Grill et al.
patent: 2004/0089470 (2004-05-01), Shimoto et al.

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