Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1997-08-26
1999-08-17
Picard, Leo P.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2541, 361525, H01G 700
Patent
active
059387971
ABSTRACT:
A method of forming a solid electrolytic capacitor which has an anode body, with an anode body lead being set therein, formed of a valve-action metal, and sequentially provided thereon are a dielectric oxide layer, a manganese dioxide layer as a first semiconductor oxide layer, a manganese dioxide layer containing graphite particles as a second semiconductor oxide layer, a graphite layer, and a metal layer either in a silver paste layer or a nickel plated layer. The manganese dioxide layer containing graphite particles possesses characteristics as in both the semiconductor oxide layer and the graphite layer so that the interface resistance and the impedance are reduced and there is no development of cracks and separations which may otherwise develop in the interface between the semiconductor oxide layer and the graphite layer caused by high temperature, high humidity and high pressure.
REFERENCES:
patent: 4017773 (1977-04-01), Cheseldine
patent: 5036434 (1991-07-01), Kobayashi
Fujiwara Masaki
Kono Takasi
Omatsu Kenichi
NEC Corporation
Picard Leo P.
Vu Phuong T.
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