Low-impedance decoupling device

Details Low-impedance decoupling device Low-impedance decoupling device

2005-06-07

2005-06-07

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S534000, C257S531000

Reexamination Certificate

active

06903438

ABSTRACT:
A decoupling device for decoupling a high-frequency noise wave in a digital circuit is formed as a line device including a portion of a semiconductor substrate, an insulator film formed thereon as a gate oxide film, and an interconnect line formed thereon as a gate electrode. The line capacitance between the interconnect line and the semiconductor substrate is 100 pF or above, whereby the decoupling device effectively decouples the electromagnetic noise wave generated by a switching device in a frequency range between 10 and 1000 GHz.

REFERENCES:
patent: 6524905 (2003-02-01), Yamamichi et al.
patent: 6624501 (2003-09-01), Shioga et al.
patent: 2004/0018693 (2004-01-01), Shioga et al.
patent: 10-270643 (1998-10-01), None

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