Low frequency inductive RF plasma reactor

Details Low frequency inductive RF plasma reactor Low frequency inductive RF plasma reactor

1995-01-17

1996-07-09

Eldred, J. Woodrow

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

42218601, 20415744, 20429831, 20429834, 156345, 1566431, B01J 800

Patent

active

055342310

ABSTRACT:
A plasma reactor with rf power inductively coupled into the reactor chamber to produce an rf magnetic field substantially perpendicular to a pedestal on which a wafer is placed for processing. Said pedestal is a powered electrode to which power is coupled to control the sheath voltage of the pedestal. This reactor is particularly suitable for soft etches and processes in which it is advantageous to couple much more power into ion production than into free radical production.

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