Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-06-06
2006-06-06
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S799000, C438S150000, C257SE21134
Reexamination Certificate
active
07056843
ABSTRACT:
A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.
REFERENCES:
patent: 5346850 (1994-09-01), Kaschmitter et al.
patent: 5817550 (1998-10-01), Carey et al.
patent: 6831333 (2004-12-01), Zhang et al.
patent: 2002280391 (2002-09-01), None
Crowder Mark A.
Sposili Robert S.
Voutsas Apostolos T.
Everhart Caridad
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
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