Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2005-04-19
2005-04-19
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S149000, C438S486000
Reexamination Certificate
active
06881686
ABSTRACT:
A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.
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Proceeding entitled, “CO2Laser Crystallization of Silicon on Bulk Fused Silica”, by Hawkins et al., published in Material Research Society Symposia Proceedings vol. 4, pp 529-534, 1982.
Crowder Mark A.
Sposili Robert S.
Voutsas Apostolos T.
Curtin Joseph P.
Everhart Caridad
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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