Low equalized sense-amp for twin cell DRAMs

Details Low equalized sense-amp for twin cell DRAMs Low equalized sense-amp for twin cell DRAMs

2005-09-29

2008-05-20

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S203000, C365S205000, C365S207000, C365S208000

Reexamination Certificate

active

07375999

ABSTRACT:
Embodiments of the invention provide a method and apparatus for accessing a twin cell memory device. In one embodiment, a twin memory cell is accessed using a first bitline and a second bitline. The method includes precharging the first bitline and the second bitline to a low voltage. A wordline voltage is asserted to access the twin memory cell. A voltage difference between the first and second bitline is created by a data value and a complement of the data value stored in the twin memory cell, and the voltage difference is sensed.

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