Low energy ion etching

Details Low energy ion etching Low energy ion etching

1983-01-17

1985-07-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156654, 2504923, B44C 122, C03C 1500

Patent

active

045307342

ABSTRACT:
A substrate is irradiated in a pattern with a neutron beam at energy levels well below those which produce either atomic reactions or physical disruption of the substrate structure. When etched with a suitable etchant, the irradiated portions are preferentially etched to produce a pattern corresponding to the irradiated pattern. In one embodiment of the invention, aluminosilicate crystals are irradiated with neutrons and are etched with hydrofluoric acid to produce the etched structure.

REFERENCES:
patent: 3303085 (1967-02-01), Price et al.
patent: 3612871 (1971-10-01), Crawford et al.

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