Low-dielectric silicon nitride film and method of forming...

Details Low-dielectric silicon nitride film and method of forming... Low-dielectric silicon nitride film and method of forming...

2005-05-10

2005-05-10

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S077000

Reexamination Certificate

active

06890869

ABSTRACT:
A method of forming a silicon nitride film includes a CVD process that uses an organic Si compound having an organic silazane bond as a gaseous source. The CVD process is conducted under a condition that the organic silazane bond in the organic Si source is preserved in the silicon nitride film.

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