Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-03-01
2011-03-01
Gulakowski, Randy (Department: 1766)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S788000, C438S789000
Reexamination Certificate
active
07897521
ABSTRACT:
Disclosed is a low dielectric constant plasma polymerized thin film using linear organic/inorganic precursors and a method of manufacturing the low dielectric constant plasma polymerized thin film through plasma enhanced chemical vapor deposition and annealing using an RTA apparatus. The low dielectric constant plasma polymerized thin film is effective for the preparation of multilayered metal thin films having a thin film structure with very high thermal stability, a low dielectric constant, and superior mechanical properties.
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European Search Report in European Patent Application No. 08170636.8.
Jung Donggeun
Lee Sung-woo
Woo Jihyung
Gulakowski Randy
Kinney & Lange , P.A.
Loewe Robert
Sungkyunkwan University Foundation for Corporate Collaboration
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