Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-08-02
2005-08-02
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C568S003000, C148S033000
Reexamination Certificate
active
06924240
ABSTRACT:
A low dielectric constant material having excellent water resistance comprising a borazine skeleton structure represented by any one of the formulas (2) to (4):wherein R1to R4are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkyiphosphino group, or a group of the formula: Si(OR7)(OR8)(OR9), provided that at least one of R1to R4is not a hydrogen atom.
REFERENCES:
patent: 2002/0000556 (2002-01-01), Sakamoto et al.
patent: 2002/0053653 (2002-05-01), Tsunoda et al.
patent: 2002/0058142 (2002-05-01), Tsunoda et al.
patent: 04013730 (1992-01-01), None
U.S. Appl. No. 10/011,982, Mikaml et al.
Kumada Teruhiko
Nagae Suguru
Nobutoki Hideharu
Toyoshima Toshiyuki
Yasuda Naoki
Fourson George
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Toledo Fernando L.
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