Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-06-26
2007-06-26
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S759000, C257S762000
Reexamination Certificate
active
11205128
ABSTRACT:
A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
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Fukuyama Shun-ichi
Nakata Yoshihiro
Owada Tamotsu
Sugiura Iwao
Suzuki Katsumi
Fujitsu Limited
Vu Hung
Westerman, Hattori, Daniels & Adrian , LLP.
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