Low dielectric constant film and method thereof

Details Low dielectric constant film and method thereof Low dielectric constant film and method thereof

1998-02-10

2000-12-19

Smith, Matthew

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

524806, 524492, 524493, H01L 2131

Patent

active

061627437

ABSTRACT:
A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.

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Cheng-Jye Chu et al., Direct Patterning Low-K Material for Damascene Process, Feb. 10-11, 1997 DUMIC Conference, pp. 93-97.
Shyun-ichi Fukuyama et al., Two-Step Planarization Technique Using Polycarbosilane, Feb. 21-22, 1995, DUMIC Conference, pp. 80-86.

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