Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-10-18
2005-10-18
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000, C257S529000
Reexamination Certificate
active
06956278
ABSTRACT:
A low-density, high-resistivity layer of a PVD sputter-deposited material, preferably titanium nitride, when coupled with a dielectric, makes a superior low-leakage insulating barrier for use in semiconductor devices. The material is created by sputtering methods that cause the ions to strike the deposition surface with reduced energy, for example in an ion metal plasma chamber with no self-bias accelerating ions normal to the deposition surface, or in a standard PVD chamber with pressure increased.
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Hu Shouxiang
Matrix Semiconductor Inc.
Squyres Pamela J.
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