Low density, high porosity material as gate dielectric for field

Details Low density, high porosity material as gate dielectric for field Low density, high porosity material as gate dielectric for field

1994-08-19

1996-06-11

O'Shea, Sandra L.

Electric lamp and discharge devices

Discharge devices having a multipointed or serrated edge...

313336, 313351, H01J 130

Patent

active

055258573

ABSTRACT:
A porous dielectric material such as silica-based aerogel is used as the dielectric layer 48 between the gate and the cathode on the emitter plate 12 of a field emission device. Aerogel, which can have a relative dielectric constant as low as 1.03, is deposited over the resistive layer 44 of the emitter plate 12. Metal layer 49, functioning as the gate electrode, is subsequently deposited over the aerogel layer 48. The use of aerogel as a gate dielectric reduces power consumption. In a disclosed embodiment, aerogel layer 48 is comprised of sublayers 48a, 48b, and 48c of aerogels of differing densities, thereby providing better adhesion of the aerogel gate dielectric to both the resistive layer 44 and metal layer 49. Methods of fabricating the aerogel gate dielectric are disclosed.

REFERENCES:
patent: 3735186 (1973-05-01), Klopfer
patent: 3755704 (1973-08-01), Spindt et al.
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5194780 (1993-03-01), Meyer
patent: 5225820 (1993-07-01), Clerc
patent: 5393712 (1995-02-01), Rostoker et al.

Affiliated with

Also associated with

Rating

Low density, high porosity material as gate dielectric for field does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low density, high porosity material as gate dielectric for field, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low density, high porosity material as gate dielectric for field will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-353943