Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-22
2005-02-22
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S714000, C438S309000
Reexamination Certificate
active
06858532
ABSTRACT:
An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides reduced capacitance and helps to achieve high speed. An apparatus is also described for practicing the disclosed process.
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Ahlgren David C.
Barbee Steven G.
Cantell Marc W.
Jagannathan Basanth
Lanzerotti Louis D.
Anderson Jay H.
International Business Machines - Corporation
Jones II Graham S.
Tsai H. Jey
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