Low defect density composite dielectric

Details Low defect density composite dielectric Low defect density composite dielectric

1997-11-19

1999-10-19

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257411, 257639, 438240, 438250, H01L 2976, H01L 2994

Patent

active

059693975

ABSTRACT:
A composite dielectric layer (102). A first layer (112) of the composite dielectric layer (102) has a small to no nitrogen concentration. A second layer (114) of the composite dielectric layer (102) has a larger nitrogen concentration (e.g., 5-15%). The composite dielectric layer (102) may be used as a thin gate dielectric wherein the second layer (114) is located adjacent a doped gate electrode (110) and has sufficient nitrogen concentration to stop penetration of dopant from the gate electrode (110) to the channel region (108). The first layer (112) is located between the second layer (114) and the channel region (108). The low nitrogen concentration of the first layer (112) is limited so as to not interfere with carrier mobility in the channel region (108).

REFERENCES:
patent: 4621277 (1986-11-01), Ito et al.
patent: 5037772 (1991-08-01), McDonald
patent: 5393683 (1995-02-01), Matthews et al.
patent: 5859760 (1999-01-01), Park et al.
1991 IEEE, IEDM 91-359, "Very Lightly Nitrided Oxide Gate Mosfets for Deep Sub-mircron CMOS Devices," pp. 13.2.1-13.2.4 (Hisayo Sasaki Momose, Toyota Morimoto. Yoshio Ozawa, Masakatsu Tsuchiaki, Mizuki Ono, Kikuo Yamabe and Hiroshi Iwai).
IEEE, IEDM-93-459, "A Boron-Retarding and High Interface Quality Thin Gate Dielectric for Deep Sub-Micron Devices," pp. 18.1.11-18.1.4 (L. Manchanda, G.R. Weber, W. Mansfield, D.M. Boulin, K. Krisch, Y.O. Kim, R. Storz, N. Moriya, H.S. Luftman, L.C. Feldman, M.L. Green, R.C. Kistler, J.T.C. Lee and F. Klemens).
1996 IEEE, IEDM 96-495, "Ultrathin Nitrogen Profile Engineered Gate Dielectric Films," pp. 19.1-1.19.1.4 (S.V. Hattangady, R. Kraft, D.T. Grider, M.A. Douglas, G.A. Brown, P.A. Tiner, J.W. Kuehne, P.E. Nicollian and M.F. Pas).
AT&T Technical Journal, Nov./Dec. 1988, "Synthesis of High-Quality Ulta-Thin Gate Oxides for ULSI Applications", pp. 155-174 (Pradip K. Roy and Ashok K. Sinha).
1993 IEEE, "A Boron-Retarding and High Interface Quality Thin Gate Dielectric for Deep-Submicron Devices", pp. 93-459 thru 93-462, (L. Manchanda, G.R. Weber, W. Mansfield, D. M. Boulin, K. Krisch, Y.O. Kim, R. Storz, N. Moriya, H.S. Luftman, L.C. Feldman, M.L. Green, R.C. Kistler, J.T.C. Lee, F. Klemens).

Affiliated with

Also associated with

Rating

Low defect density composite dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low defect density composite dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low defect density composite dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2059361